Datasheet Summary
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TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV)
Notebook PC Applications Portable Equipment Applications
- -
- - Low drain-source ON resistance: RDS (ON) = 58 mΩ (typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.) Low leakage current: IDSS =
- 10 µA (max) (VDS =
- 20 V) Enhancement-model: Vth =
- 0.45 to
- 1.2 V (VDS =
- 10 V, ID =
- 200 µA) Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD (1) PD (2) PD (1) PD (2) EAS IAR EAR Tch Tstg Rating -20 -20 ±8 -3.0 -12 1.35 1.12 W...