Datasheet Summary
MOSFETs Silicon P-Channel MOS (U-MOS)
1. Applications
- Power Management Switches
2. Features
(1) (2) (3) (4) Small footprint due to a small and thin package Low drain-source on-resistance: RDS(ON) = 90 mΩ (typ.) (VGS = -4.5 V) Low leakage current: IDSS = -10 µA (max) (VDS = -30 V) Enhancement mode: Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -0.1 mA)
3. Packaging and Internal Circuit
1: Source1 2: Gate1 3: Source2 4: Gate2 5, 6: Drain2 7, 8: Drain1
VS-8
4....