TPCF8306 - MOSFET

Product Overview

Toshiba Semiconductor

Part number	TPCF8306
Manufacturer	Toshiba Semiconductor
File Size	224.69 KB
Description	MOSFET
Datasheet	TPCF8306 Datasheet
Additional preview pages of the TPCF8306 datasheet.

(1) (2) (3) (4) Small footprint due to a small and thin package Low drain-source on-resistance: RDS(ON) = 90 mΩ (typ. ) (VGS = -4.5 V) Low leakage current: IDSS = -10 µA (max) (VDS = -30 V) Enhancement mode: Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -0.1 mA) 3. Packaging and Internal Circuit 1: Source1 2: Gate1 3: Source2 4: Gate2 5, 6: Drain2 7, 8: Drain1 VS-8 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Drain-gate voltage Gate-s.

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Published: Aug 27, 2014 |