Datasheet Summary
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII)
High-Efficiency DC／DC Converter Applications Notebook PC Applications Portable-Equipment Applications
0.5±0.1
Unit: mm
0.8 8
0.25±0.05
0.05 M A 5
4.65±0.3 3.65±0.2
- Small footprint due to a small and thin package
- High-speed switching
- Small gate charge: QSW = 6.0 nC (typ.)
- Low drain-source ON-resistance: RDS (ON) = 7 mΩ (typ.)
- High forward transfer admittance: |Yfs| =36 S (typ.)
- Low leakage current: IDSS = 10 µA (max) (VDS = 30 V)
- Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA)
0.75±0.05
0.2＋－00.2
0.166±0.05
14 3.5±0.2
0.55 A
0.05...