Datasheet Summary
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅤ-H)
High-Efficiency DC-DC Converter Applications Notebook PC Applications Portable Equipment Applications
0.5± 0.1
Unit: mm
0.8 8
0.25±0 . 05 0.05 M A
4.65±0 . 3 3.65±0. 2
1.05± 0.2 0.166 ±0.05
- Small footprint due to a small and thin package
- High-speed switching
- Small gate charge: QSW = 9.3 nC (typ.)
- Low drain-source ON-resistance: RDS (ON) = 4.7 mΩ (typ.)
- High forward transfer admittance: |Yfs| = 76 S (typ.)
- Low leakage current: IDSS = 10 μA (max) (VDS = 30 V)
- Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 1 mA)
0.75±0.05
0.2＋－00.2
14 3.5±0. 2
0.55 A
0.05...