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TPCM8002-H
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅤ-H)
TPCM8002-H
High-Efficiency DC-DC Converter Applications Notebook PC Applications Portable Equipment Applications
0.5± 0.1
Unit: mm
0.8 8
0.25±0 . 05 0.05 M A
5
4.65±0 . 3 3.65±0. 2
1.05± 0.2 0.166 ±0.05
• Small footprint due to a small and thin package • High-speed switching • Small gate charge: QSW = 9.3 nC (typ.) • Low drain-source ON-resistance: RDS (ON) = 4.7 mΩ (typ.) • High forward transfer admittance: |Yfs| = 76 S (typ.) • Low leakage current: IDSS = 10 μA (max) (VDS = 30 V) • Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 1 mA)
0.75±0.05
0.2＋－00.2
14 3.5±0. 2
0.55 A
0.05 S
S1
4
0.6±0 . 1
2.2±0 . 2
Absolute Maximum Ratings (Ta = 25°C)
2.75±0 .
TPCM8002-H Datasheet
