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TPCP8109 - Silicon P-Channel MOSFET

Features

  • (1) AEC-Q101 qualifed (2) Small, thin package (3) Small gate charge: QSW = 5.8 nC (typ. ) (4) Low drain-source on-resistance: RDS(ON) = 40.3 mΩ (typ. ) (VGS = -10 V) (5) Low leakage current: IDSS = -10 µA (max) (VDS = -40 V) (6) Enhancement mode: Vth = -2 to -3 V (VDS = -10 V, ID = -1 mA) 3. Packaging and Internal Circuit TPCP8109 PS-8 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain ©2016 Toshiba Corporation 1 Start of commercial production 2012-10 2016-02-23 Rev.3.0 TPCP8109 4. Absolute Maximum.

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Datasheet Details

Part number TPCP8109
Manufacturer Toshiba
File Size 256.32 KB
Description Silicon P-Channel MOSFET
Datasheet download datasheet TPCP8109 Datasheet

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Full PDF Text Transcription

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MOSFETs Silicon P-Channel MOS (U-MOS) TPCP8109 1. Applications • Motor Drivers • Mobile Equipment 2. Features (1) AEC-Q101 qualifed (2) Small, thin package (3) Small gate charge: QSW = 5.8 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 40.3 mΩ (typ.) (VGS = -10 V) (5) Low leakage current: IDSS = -10 µA (max) (VDS = -40 V) (6) Enhancement mode: Vth = -2 to -3 V (VDS = -10 V, ID = -1 mA) 3. Packaging and Internal Circuit TPCP8109 PS-8 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain ©2016 Toshiba Corporation 1 Start of commercial production 2012-10 2016-02-23 Rev.3.0 TPCP8109 4.
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