Datasheet Summary
MOSFETs Silicon P-Channel MOS (U-MOS)
1. Applications
- Motor Drivers
- Mobile Equipment
2. Features
(1) AEC-Q101 qualifed (2) Small, thin package (3) Small gate charge: QSW = 5.8 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 40.3 mΩ (typ.) (VGS = -10 V) (5) Low leakage current: IDSS = -10 µA (max) (VDS = -40 V) (6) Enhancement mode: Vth = -2 to -3 V (VDS = -10 V, ID = -1 mA)
3. Packaging and Internal Circuit
PS-8
1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain
©2016 Toshiba Corporation
Start of mercial production
2012-10
2016-02-23 Rev.3.0
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