TPCP8504
TOSHIBA Transistor Silicon NPN Epitaxial Type
..
High Speed Switching Applications DC-DC Converter Applications
- -
- High DC current gain : h FE = 400 to 1000 (IC = 0.2 A)
2.4±0.1
Unit: mm
0.33±0.05 0.05 M A
8 5
High-speed switching : tf = 25 ns (typ.)
1 4
Maximum Ratings (Ta = 25°C)
Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation (Note 2) Junction temperature Storage temperature range t = 10s DC DC (Note 1) Symbol VCBO VCEO VEBO IC ICP IB Pc Tj Tstg Rating 20 10 7 2.0 3.5 0.2 2.8 1.2 150
- 55 to 150 Unit V V V A A W °C °C
0.65 2.9±0.1
0.05 M B
0.8±0.05 0.025
0.17±0.02
0.28 +0.1 -0.11
1.12 -0.12 1.12 -0.12 0.28 +0.1 -0.11
+0.13
+0.13
Pulse (Note 1 )
1.Collector 2.Collector 3.Collector 4.Base
5.Emitter 6.Collector 7.Collector 8.Collector
JEDEC JEITA TOSHIBA
― ― 2-3V1A
Weight: 0.017 g (typ.)
Note 1: Please use devices on condition that the...
