TPCS8205 - TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS II)

Toshiba

Datasheet Details

Part number	TPCS8205
Manufacturer	Toshiba
File Size	293.06 KB
Description	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS II)
Datasheet	TPCS8205 Datasheet

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TPCS8205 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS II) TPCS8205 Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs l l ...

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Battery Applications Portable Equipment Applications Notebook PCs l l l l l Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 30 mΩ (typ.) High forward transfer admittance: |Yfs| = 10 S (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 20 V) Enhancement-mode: Vth = 0.5~1.2 V (VDS = 10 V, ID = 200 µA) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20kΩ) Gate-source voltage Drain curren DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD (1) Rating 20 20 ±12 5 20 1.1 W PD(2) 0.