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TPCS8209 - TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)

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Datasheet Details

Part number TPCS8209
Manufacturer Toshiba
File Size 362.44 KB
Description TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)
Datasheet download datasheet TPCS8209 Datasheet

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TPCS8209 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) TPCS8209 Lithium Ion Battery Applications Notebook PC Applications Portable Machines and Tools • • • • • Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 19 mΩ (typ.) High forward transfer admittance: |Yfs| = 9.2 S (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 20 V) Enhancement-mode: Vth = 0.5~1.2 V (VDS = 10 V, ID = 200 µA) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD (1) PD (2) PD (1) PD (2) EAS IAR EAR Tch Tstg Rating 20 20 ±12 5 20 1.1 W 0.