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TPCS8302
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII)
TPCS8302
Lithium Ion Battery Applications Notebook PC Applications Portable Machines and Tools
• • • • • Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 22 mΩ (typ.) High forward transfer admittance: |Yfs| = 12 S (typ.) Low leakage current: IDSS = −10 µA (max) (VDS = −20 V) Enhancement-mode: Vth = −0.5~−1.2 V (VDS = −10 V, ID = −200 µA) Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD (1) PD (2) PD (1) PD (2) EAS IAR EAR Tch Tstg Rating −20 −20 ±12 −5 −20 1.1 W 0.
TPCS8302 Datasheet
