Datasheet Summary
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)
High-Speed Switching Applications Switching Regulator Applications DC-DC Converter Applications
Unit: mm
- Small footprint due to small and thin package
- Low drain-source ON resistance: RDS (ON) = 0.56 Ω (typ.)
- High forward transfer admittance: |Yfs| = 1.8 S (typ.)
- Low leakage current: IDSS = 100 μA (max) (VDS = 200 V)
- Enhancement model: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1...