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TPCS8004 - N-Channel MOSFET

Features

  • d for use in equipment or systems that require extraordinarily high levels of q.

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Full PDF Text Transcription

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TPCS8004 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) TPCS8004 High-Speed Switching Applications Switching Regulator Applications DC-DC Converter Applications Unit: mm • Small footprint due to small and thin package • Low drain-source ON resistance: RDS (ON) = 0.56 Ω (typ.) • High forward transfer admittance: |Yfs| = 1.8 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 200 V) • Enhancement model: Vth = 1.5 to 3.
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