Datasheet Summary
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACHⅡπ-MOSⅤ)
High-Speed Switching Applications Switching Regulator Applications DC/DC Converter Applications
Unit: mm
- Low drain-source ON-resistance: RDS (ON) = 0.27 Ω (typ.)
- High forward transfer admittance: |Yfs| = 2.1 S (typ.)
- Low leakage current: IDSS = 100 µA (max) (VDS = 150 V)
- Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1...