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TPCS8009-H - N-Channel MOSFET

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TPCS8009-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACHⅡπ-MOSⅤ) TPCS8009-H High-Speed Switching Applications Switching Regulator Applications DC/DC Converter Applications Unit: mm • Low drain-source ON-resistance: RDS (ON) = 0.27 Ω (typ.) • High forward transfer admittance: |Yfs| = 2.1 S (typ.) • Low leakage current: IDSS = 100 µA (max) (VDS = 150 V) • Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit 1.2.3. Source 4 Gate 5.6.7.
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