Datasheet Summary
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS II)
Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs
Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 16 mΩ (typ.) High forward transfer admittance: |Yfs| = 17 S (typ.) Low leakage current: IDSS =
- 10 µA (max) (VDS =
- 20 V) Enhancement-mode: Vth =
- 0.5~- 1.2 V (VDS =
- 10 V, ID =
- 200 µA) Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) (t = 10 s) (Note 2a) (t = 10 s) (Note 2b) Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR...