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TPCS8102
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS II)
TPCS8102
Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs
Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 16 mΩ (typ.) High forward transfer admittance: |Yfs| = 17 S (typ.) Low leakage current: IDSS = −10 µA (max) (VDS = −20 V) Enhancement-mode: Vth = −0.5~−1.2 V (VDS = −10 V, ID = −200 µA) Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) (t = 10 s) (Note 2a) (t = 10 s) (Note 2b) Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR EAR Tch Tstg Rating −20 −20 ±12 −6 −24 1.5 0.6 46.8 −6 0.
TPCS8102 Datasheet
