Datasheet Summary
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV)
Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications
Unit: mm
- Small footprint due to small and thin package
- Low drain-source ON resistance: RDS (ON) = 9.6 mΩ (typ.)
- High forward transfer admittance: |Yfs| = 23 S (typ.)
- Low leakage current: IDSS =
- 10 μA (max) (VDS =
- 30 V)
- Enhancement mode: Vth =
- 0.8 to
- 2.0 V (VDS =
- 10 V, ID =
- 1 mA)
1,2,3 4 5,6,7,8
Source Gate...