TPCS8101 Description
TPCS8101 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS II) TPCS8101 Lithium Ion Battery Applications Portable Equipment Applications Notebook PCs l Small footprint due to small and thin package l Low drain-source ON resistance: RDS (ON) = 15 mΩ (typ.) l High forward transfer admittance: |Yfs| = 12 S (typ.) l Low leakage current:.
TPCS8101 Key Features
- Small footprint due to small and thin package
- Low drain-source ON resistance: RDS (ON) = 15 mΩ (typ.)
- High forward transfer admittance: |Yfs| = 12 S (typ.)
- Low leakage current: IDSS = −10 µA (max) (VDS = −30 V)
- Enhancement-mode: Vth = −0.8~−2.0 V (VDS = −10 V, ID = −1 mA) Unit: mm Maximum Ratings (Ta = 25°C) Characteri