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TPD1008SA - High-side Power Switch

Key Features

  • l A monolithic power IC with a new structure combining a control block (Bi.
  • CMOS) and a vertical power MOS FET (π.
  • MOS) on a single chip. l One side of load can be grounded to a high.
  • side switch. l Can directly drive a power load from a microprocessor. l Built.
  • in protection against thermal shutdown and load short circuiting. l Incorporates a diagnosis function that allows diagnosis output to be read externally at load short circuiting, opening, or overtemperatu.

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Datasheet Details

Part number TPD1008SA
Manufacturer Toshiba
File Size 235.98 KB
Description High-side Power Switch
Datasheet download datasheet TPD1008SA Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TPD1008SA TOSHIBA Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit TPD1008SA High−side Power Switch for Motors, Solenoids, and Lamp Drivers TPD1008SA is a monolithic power IC for high−side switches. The IC has a vertical MOS FET output which can be directly driven from a CMOS or TTL logic circuit (e.g, an MPU). The device offers intelligent self−protection and diagnostic functions. Features l A monolithic power IC with a new structure combining a control block (Bi–CMOS) and a vertical power MOS FET (π–MOS) on a single chip. l One side of load can be grounded to a high−side switch. l Can directly drive a power load from a microprocessor. l Built–in protection against thermal shutdown and load short circuiting.