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TPD1011S - High-side Power Switch

General Description

Pin No.

Input pin.

compatible, with pull

down resistor connected.

Even if the input is open, output will not accidentally turn on.

diagnosis detection pin.

Key Features

  • l A monolithic power IC with a new structure combining a control block (Bi.
  • CMOS) and a vertical power MOS FET (π.
  • MOS) on a single chip. l One side of load can be grounded to a high.
  • side switch. l Can directly drive a power load from a microprocessor. l Built.
  • in protection against thermal shutdown and load short circuiting. Also incorporates a diagnosis function that allows diagnosis output to be read externally at load short circuiting, opening, or overtempera.

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Datasheet Details

Part number TPD1011S
Manufacturer Toshiba
File Size 237.22 KB
Description High-side Power Switch
Datasheet download datasheet TPD1011S Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TPD1011S TOSHIBA Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit TPD1011S High−side Power Switch for Motors, Solenoids, and Lamp Drivers TPD1011S is a monolithic power IC for high-side switches. The IC has a vertical MOS FET output which can be directly driven from a CMOS or TTL logic circuit (eg, an MPU). The device offers intelligent self-protection and diagnostic functions. Features l A monolithic power IC with a new structure combining a control block (Bi−CMOS) and a vertical power MOS FET (π−MOS) on a single chip. l One side of load can be grounded to a high−side switch. l Can directly drive a power load from a microprocessor. l Built−in protection against thermal shutdown and load short circuiting.