Datasheet4U Logo Datasheet4U.com

TPD1024S - Silicon Monolithic Power MOS

General Description

Pin No.

1 Symbol IN Function Input pin.

Input is CMOS-compatible, with pull-down resistor connected.

Key Features

  • l A monolithic power IC with a new structure combining a control block and a vertical power MOS FET (π-MOS) on a single chip. l Can directly drive a power load from a CMOS logic. l Built-in protection against overvoltage, load short circuiting, and thermal shutdown. l Low on resistance : RDS (ON) = 0.5 Ω(max), (@VIN = 5 V, Tj = 25°C) l 3-pin power-molded package usable for surface mounting. Pin Assignment Weight HSIP3-P-2.30B HSOP3-P-2.30A : 0.36 g (typ. ) : 0.28 g (typ. ) Note: That because.

📥 Download Datasheet

Datasheet Details

Part number TPD1024S
Manufacturer Toshiba
File Size 193.50 KB
Description Silicon Monolithic Power MOS
Datasheet download datasheet TPD1024S Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
TPD1039F Low-Side Power Switch Toshiba
TPD1052F Silicon Monolithic Power MOS Toshiba
TPD1053F Silicon Monolithic Power MOS Toshiba
TPD1054F Low-Side Switch Toshiba
TPD1055FA High side power switch Toshiba

Other Datasheets by Toshiba

Part Number Description
TPD1028BS Silicon Monolithic Power MOS
TPD1008SA High-side Power Switch
TPD1011S High-side Power Switch
TPD1018F HIGH SIDE POWER SWITCH
TPD1030F 2-IN-1 Low-Side Switch

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
TPD1024S TOSHIBA Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit TPD1024S Low-Side Power Switch for Motors, Solenoids, and Lamp Drivers TPD1024S is a monolithic power IC for low-side switches. The IC has a vertical MOS FET output which can be directly driven from a CMOS or TTL logic circuit (e.g, an MPU). The device offers intelligent self-protection function Features l A monolithic power IC with a new structure combining a control block and a vertical power MOS FET (π-MOS) on a single chip. l Can directly drive a power load from a CMOS logic. l Built-in protection against overvoltage, load short circuiting, and thermal shutdown. l Low on resistance : RDS (ON) = 0.5 Ω(max), (@VIN = 5 V, Tj = 25°C) l 3-pin power-molded package usable for surface mounting.