Toshiba 1SS403
Silicon Epitaxial Planar Type diode
| Part No. | 1SS403 |
|---|---|
| Datasheet | 1SS403 Download |
| Manufacturer |  Toshiba |
| Description | Silicon Epitaxial Planar Type diode |
| Buy | Stock & Price |
APPLICATIONS
Unit: mm● AEC-Q101 Qualified (Note1)
● Two-pin small packages are suitable for higher mounting densities.
● Excellent in forward current and forward voltage characteristics : VF (2) = 0.90 V (typ.)
● Fast reverse recovery time : trr = 60 ns (max)
● Small total capacitance : CT = 1.5 pF (typ.) Note1: For detail information, please contact our sales.
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 250 V Reverse voltage VR 200 V Maximum (peak) forward current IFM 300 mA Average forward current IO 100 mA Surge current (10ms) IFSM 2 A Power dissipation PD (Note 4) 200 mW Junction temperature Tj (Note 2) 150 °C Tj (Note 3) 125 Storage temperature range Tstg (Note 2) −55 to 150 °C Tstg (Note 3) −55 to 125 USC JEDEC ― JEITA ― TOSHIBA 1-1E1A Weight: 0.0045g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause th...
