1SS403E - Silicon Epitaxial Planar Switching Diodes

Product Overview

Toshiba

Part number	1SS403E
Manufacturer	Toshiba
File Size	171.06 KB
Description	Silicon Epitaxial Planar Switching Diodes
Datasheet	1SS403E Datasheet
Additional preview pages of the 1SS403E datasheet.

(1) Small package (2) Low reverse current. : IR(2) = 1.0 µA (max) (3) Small total capacitance: Ct = 3.0 pF (max) 3. Packaging and Internal Circuit 1SS403E 1: Cathode 2: Anode ESC 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Note Rating Unit Peak reverse voltage VRM 250 V Reverse voltage VR 200 V Peak forward current IFM 300 mA Average rectified current IO 100 mA Non-repetitive peak forward surge current IFSM (Note 1).

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Published: May 19, 2024 |