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1SS403E - Silicon Epitaxial Planar Switching Diodes

Key Features

  • (1) Small package (2) Low reverse current. : IR(2) = 1.0 µA (max) (3) Small total capacitance: Ct = 3.0 pF (max) 3. Packaging and Internal Circuit 1SS403E 1: Cathode 2: Anode ESC 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Note Rating Unit Peak reverse voltage VRM 250 V Reverse voltage VR 200 V Peak forward current IFM 300 mA Average rectified current IO 100 mA Non-repetitive peak forward surge current IFSM (Note 1).

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Datasheet Details

Part number 1SS403E
Manufacturer Toshiba
File Size 171.06 KB
Description Silicon Epitaxial Planar Switching Diodes
Datasheet download datasheet 1SS403E Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Switching Diodes Silicon Epitaxial Planar 1SS403E 1. Applications • Ultra-High-Speed Switching 2. Features (1) Small package (2) Low reverse current. : IR(2) = 1.0 µA (max) (3) Small total capacitance: Ct = 3.0 pF (max) 3. Packaging and Internal Circuit 1SS403E 1: Cathode 2: Anode ESC 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Note Rating Unit Peak reverse voltage VRM 250 V Reverse voltage VR 200 V Peak forward current IFM 300 mA Average rectified current IO 100 mA Non-repetitive peak forward surge current IFSM (Note 1) 2 A Power dissipation PD (Note 2) 200 mW Junction temperature Tj 150  Storage temperature Tstg -55 to 150  Note: Using continuously under heavy loads (e.g.