2N6250
2N6250 is SILICON NPN Transistor manufactured by Toshiba.
:
SILICON NPN TRIPLE DIFFUSED TYPE
DC-DC CONVERTER, SWITCHING REGULATOR AND HIGH POWER AMPLIFIER APPLICATIONS.
Features
. High Collector-Emitter Sustaining Voltage
: VCE0 (SUS)=275V (Min.) . Low Saturation Voltage : Vc E(sat) <1- 5V
@ I C=10A, Ib=1.25A . Excellent Switching Times : t r <2.0jus, tf <1.0^s
@ Ic=10A, I B=±1.25A . High Collector Power Dissipation Capacity
: P C=175W (Max.) . Excellent Area of Safe Operatings
Unit in mm
02&OMAX etero max,
' "I
X X 5i 1
- +0.09
0i.o- a 04
+1
MAXIMUM RATINGS (Ta=25 C)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Vc BO
Collector-Emitter Sustaining Voltage (RBE=5Qfl) Collector-Emitter Sustaining Voltage (VBE=0)
Collector-Emitter Sustaining Voltage
Emitter-Base Voltage
VCER(SUS) VCEX(SUS) VCEO(SUS)
Vebo
DC Collector Current ic
Peak
Base Current
Collector Power...
