• Part: 2SA739
  • Description: SILICON PNP TRIPLE DIFFUSED MESA TYPE TRANSISTOR
  • Category: Transistor
  • Manufacturer: Toshiba
  • Size: 124.41 KB
Download 2SA739 Datasheet PDF
Toshiba
2SA739
2SA739 is SILICON PNP TRIPLE DIFFUSED MESA TYPE TRANSISTOR manufactured by Toshiba.
FEATURES - High Voltage : VCEO=-40OV - Low Saturation Voltage : VCE ( sat )=-1.5V (Max.) (I C=-1A, I B=-0.2A) INDUSTRIAL APPLICATIONS Unit in mm 025.OMAX. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissip Fation (Tc=25°C) : Junction Temperature Storage Temperature Range SYMBOL v CBO 'CEO VEBO IB PC L stg RATING -400 -400 -5 -3 -1 50 150 -65^150 UNIT 1. BASE 2. EMITTER COLLECTOR (CASE) JEDEC TO-2 4MA/TO-3 TC-3, TB-3 TOSHIBA 2-21E1A Mounting Kit No. AC73 Weight : 15. 8g ELECTRICAL CHARACTERISTICS (Ta =25°C) CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage SYMBOL z CB0 I EB0 V (BR) CEO h FE V CE(sat) TEST CONDITION V CB=-300V, I E=0 VEB=-5V, I...