2SA739 - SILICON PNP TRIPLE DIFFUSED MESA TYPE TRANSISTOR

Datasheet Summary

Features

High Voltage : VCEO=-40OV.
Low Saturation Voltage : VCE ( sat )=-1.5V (Max. ) (I C=-1A, I B=-0.2A).

Toshiba

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Datasheet Details

Part number	2SA739
Manufacturer	Toshiba
File Size	124.41 KB
Description	SILICON PNP TRIPLE DIFFUSED MESA TYPE TRANSISTOR
Datasheet	2SA739 Datasheet
Additional preview pages of the 2SA739 datasheet.

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Full PDF Text Transcription

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: SILICON PNP TRIPLE DIFFUSED MESA TYPE HIGH VOLTAGE SWITCHING APPLICATIONS. FEATURES • High Voltage : VCEO=-40OV • Low Saturation Voltage : VCE ( sat )=-1.5V (Max.) (I C=-1A, I B=-0.2A) INDUSTRIAL APPLICATIONS Unit in mm 025.OMAX. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power DissipFation (Tc=25°C) : Junction Temperature Storage Temperature Range SYMBOL v CBO 'CEO VEBO IB PC L stg RATING -400 -400 -5 -3 -1 50 150 -65^150 UNIT 1. BASE 2. EMITTER COLLECTOR (CASE) JEDEC TO-2 4MA/TO-3 TC-3, TB-3 TOSHIBA 2-21E1A Mounting Kit No. AC73 Weight : 15.

Published: Jul 17, 2018 |