Datasheet Summary
:
SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
2SC1 09A,
HIGH FREQUENCY AMPLIFIER APPLICATIONS. HIGH SPEED SWITCHING APPLICATIONS.
Unit in mm
^9.39 MAX
Features
. High Switching Speed: t st g=60nS (Typ.) . High Transition Frequency; f T = 150MHz (Typ.) . High Breakdown Voltage
: VcBO=90v (2SC108A) . Low Collector Saturation Voltage
: VCE ( sat) =0.4V(Max.) at I c =200mA, I B=20mA
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
2SC108A 2SC109A v CBO
Collector-
Emitter Voltage 2SC109A vCEO
Emitter-Base Voltage
VEBO
Collector Current ic
Base Current
Collector Power Dissipation PC
Junction Temperature
Tj
Storage Temperature Range...
