Datasheet4U Logo Datasheet4U.com

2SC108A - Silicon NPN Epitaxial Type Transistor

Key Features

  • . High Switching Speed: t st g=60nS (Typ. ) . High Transition Frequency; f T = 150MHz (Typ. ) . High Breakdown Voltage : VcBO=90v (2SC108A) . Low Collector Saturation Voltage : VCE ( sat) =0.4V(Max. ) at I c =200mA, I B=20mA.

📥 Download Datasheet

Datasheet Details

Part number 2SC108A
Manufacturer Toshiba
File Size 40.94 KB
Description Silicon NPN Epitaxial Type Transistor
Datasheet download datasheet 2SC108A Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SC1080 (2SC1079 / 2SC1080) SILICON POWER TRANSISTOR SavantIC
2SC1080 NPN Transistor INCHANGE
2SC1000 Silicon NPN Transistor ETC
2SC1002 Silicon NPN Power Transistors SavantIC
2SC1004 SILICON POWER TRANSISTOR SavantIC

Other Datasheets by Toshiba

Part Number Description
2SC1000 Silicon NPN Transistor
2SC1001 SILICON NPN TRANSISTOR
2SC109A Silicon NPN Epitaxial Type Transistor
2SC1164 SILICON NPN TRANSISTOR
2SC1165 Silicon NPN epitaxial planer type Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
: SILICON NPN EPITAXIAL TYPE (PCT PROCESS) 2SC1 09A, HIGH FREQUENCY AMPLIFIER APPLICATIONS. HIGH SPEED SWITCHING APPLICATIONS. Unit in mm ^9.39 MAX I FEATURES . High Switching Speed: t st g=60nS (Typ.) . High Transition Frequency; f T = 150MHz (Typ.) . High Breakdown Voltage : VcBO=90v (2SC108A) . Low Collector Saturation Voltage : VCE ( sat) =0.4V(Max.) at I c =200mA, I B=20mA MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL Collector-Base Voltage 2SC108A 2SC109A v CBO Collector- 2SC108A Emitter Voltage 2SC109A vCEO Emitter-Base Voltage VEBO Collector Current ic Base Current IB Collector Power Dissipation PC Junction Temperature Tj Storage Temperature Range Tstg RATING 90 70 70 50 5 800 100 800 175 -65^175 UNIT V V V mA mA mW °C °C 1. EMITTER 2. BASE 3.