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2SC109A Datasheet PDF

Toshiba 2SC109A

Silicon NPN Epitaxial Type Transistor

Part No. 2SC109A
Datasheet 2SC109A Download
Manufacturer
Toshiba
Description Silicon NPN Epitaxial Type Transistor
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2SC109A datasheet page 1 preview

APPLICATIONS

. HIGH SPEED SWITCHING

APPLICATIONS

. Unit in mm ^9.39 MAX I

FEATURES

. High Switching Speed: t st g=60nS (Typ.) . High Transition Frequency; f T = 150MHz (Typ.) . High Breakdown Voltage : VcBO=90v (2SC108A) . Low Collector Saturation Voltage : VCE ( sat) =0.4V(Max.) at I c =200mA, I B=20mA

MAXIMUM RATINGS

(Ta=25°C) CHARACTERISTIC SYMBOL Collector-Base Voltage 2SC108A 2SC109A v CBO Collector- 2SC108A Emitter Voltage 2SC109A vCEO Emitter-Base Voltage VEBO Collector Current ic Base Current IB Collector Power Dissipation PC Junction Temperature Tj Storage Temperature Range Tstg RATING 90 70 70 50 5 800 100 800 175 -65^175 UNIT V V V mA mA mW °C °C 1. EMITTER 2. BASE 3. COLLECTOR (CASE) JEDEC EIAJ TOSHIBA T0-3S TC-5, TB-5] Weight : 1.1 4g

ELECTRICAL CHARACTERISTICS

(Ta=25°C) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector 2SC108A Cut-off Current 2SC109A ICB0 VCB=80V, IE=0 VCB=60V, IE=0 - - 0.5 yA Emitter Cut-off Current lEBO VEB=5V, lc=0 - - 1.0 yA DC Current...