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2SC109A - Silicon NPN Epitaxial Type Transistor

Download the 2SC109A datasheet PDF. This datasheet also covers the 2SC108A variant, as both devices belong to the same silicon npn epitaxial type transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • . High Switching Speed: t st g=60nS (Typ. ) . High Transition Frequency; f T = 150MHz (Typ. ) . High Breakdown Voltage : VcBO=90v (2SC108A) . Low Collector Saturation Voltage : VCE ( sat) =0.4V(Max. ) at I c =200mA, I B=20mA.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2SC108A_Toshiba.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 2SC109A
Manufacturer Toshiba
File Size 40.94 KB
Description Silicon NPN Epitaxial Type Transistor
Datasheet download datasheet 2SC109A Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
: SILICON NPN EPITAXIAL TYPE (PCT PROCESS) 2SC1 09A, HIGH FREQUENCY AMPLIFIER APPLICATIONS. HIGH SPEED SWITCHING APPLICATIONS. Unit in mm ^9.39 MAX I FEATURES . High Switching Speed: t st g=60nS (Typ.) . High Transition Frequency; f T = 150MHz (Typ.) . High Breakdown Voltage : VcBO=90v (2SC108A) . Low Collector Saturation Voltage : VCE ( sat) =0.4V(Max.) at I c =200mA, I B=20mA MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL Collector-Base Voltage 2SC108A 2SC109A v CBO Collector- 2SC108A Emitter Voltage 2SC109A vCEO Emitter-Base Voltage VEBO Collector Current ic Base Current IB Collector Power Dissipation PC Junction Temperature Tj Storage Temperature Range Tstg RATING 90 70 70 50 5 800 100 800 175 -65^175 UNIT V V V mA mA mW °C °C 1. EMITTER 2. BASE 3.