Toshiba 2SC1169
Silicon NPN Transistor
| Part No. | 2SC1169 |
|---|---|
| Datasheet | 2SC1169 Download |
| Manufacturer |  Toshiba |
| Description | Silicon NPN Transistor |
| Buy | Stock & Price |
APPLICATIONS
.FEATURES
: . Output Power : P =2.5W (Min.) ( f=175MHz, VCC=13.5V, Pi=0.25W ) 09.39MAX. 6.5MAX . Unit in mm rTTTT pa 45 THT- n 2 6 MAX.MAXIMUM RATINGS
(Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range SYMBOL v CBO v CEO 'EBO ic stgELECTRICAL CHARACTERISTICS
(Ta=25°C) RATING 40 20 10 175 -65-175 UNIT 1. EMITTER fCASE) 2. BASE 3. COLLECTOR °C TOSHIBA 2— 9A1B Weight : 3.7^ CHARACTERISTIC SYMBOL TEST CONDITION Collector Cut-off Current Collector-Base Breakdown Voltage ICBO VCB =15V, I E=0 V(BR)CB0 I c=lmA, Ie=0 Collector-Emitter Breakdown Voltage V (BR) CEO I c=10mA, Ib=0 Emitter-Base Breakdown Voltage v (BR) EBO I E =lmA, I C =0 DC Current Gain hFE VCE=5V, I C =0.2A Collector Output Capacitance Cob V CB=10V, IE=0, f=lMHz Output Power Po (Fig.) Power Gain Collector Efficiency Series Equivalent Input Impedance Series Equivalent Output Impedance Gpe Vc Zin z 0UT VCC=13.5V, f=175MHz, Pi=0.25W V CC=13.5V, f=175MHz, P =2.5W MIN. - 40 TYP. - MAX.