Datasheet Summary
SILICON NPN EPITAXIAL PLANAR TYPE
HIGH POWER AMPLIFIER FOR CATV APPLICATIONS.
Unit in mm
09.39MAX.
Features
. Wide Band and High Gain for Class A Amplifier.
7- 8.45MAX X1
<
]haracteristics
. All Electrodes Insulated frc m Case.
00.4 5 s o5
^5.0 8
MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range
SYMBOL VCBO VCEO v EBO ic PC T
T stg
RATING UNIT 50 V 35 V 3V
300 mA 600 mW 150 °C -55 -150 °C
'? ~?>s
A 3
4tA \^^Vs%Hy
O-/
JEDEC EIAJ TOSHIBA i- EMITTER 2. BASE 3. COLLECTOR 4. CASE
TO-33
TC-5, TB-14B
2-8D1A
ELECTRICA...