2SC1164 - SILICON NPN TRANSISTOR

Toshiba

Key Features

. Wide Band and High Gain for Class A Amplifier. 7- 8.45MAX X1 < ]haracteristics . All Electrodes Insulated frc m Case. 00.4 5 s o5 1 ^5.0 8.

2SC1164 silicon npn transistor by Toshiba - Datasheet Preview

Datasheet Details

Part number	2SC1164
Manufacturer	Toshiba
File Size	64.89 KB
Description	SILICON NPN TRANSISTOR
Datasheet	2SC1164 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SILICON NPN EPITAXIAL PLANAR TYPE 2SC1164 HIGH POWER AMPLIFIER FOR CATV APPLICATIONS. Unit in mm 09.39MAX. FEATURES . Wide Band and High Gain for Class A Amplifier. 7- 8.45MAX X1 < ]haracteristics . All Electrodes Insulated frc m Case. 00.4 5 s o5 1 ^5.0 8 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VCBO VCEO v EBO ic PC T J T stg RATING UNIT 50 V 35 V 3V 300 mA 600 mW 150 °C -55 -150 °C '? ~?>s A 3 4tA \^^Vs%Hy O-/ JEDEC EIAJ TOSHIBA i- EMITTER 2. BASE 3. COLLECTOR 4. CASE TO-33 TC-5, TB-14B 2-8D1A ELECTRICAL CHARACTERISTICS (Ta=25°C) Weight : 1.