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2SC1199 - SILICON NPN TRANSISTOR

Key Features

  • . Low Noise for High and Low Frequency : NF=4 . OdB (Max . ) : NF=lldB (Max. ) f=200MHz f=10kHz Unit in mm 09.S9MAX.

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Datasheet Details

Part number 2SC1199
Manufacturer Toshiba
File Size 65.79 KB
Description SILICON NPN TRANSISTOR
Datasheet download datasheet 2SC1199 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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: SILICON NPN EPITAXIAL PLANAR TYPE 2SC1199 HIGH FREQUENCY WIDE BAND AMPLIFIER APPLICATIONS. HIGH FREQUENCY LOW NOISE AMPLIFIER APPLICATIONS. FEATURES . Low Noise for High and Low Frequency : NF=4 . OdB (Max . ) : NF=lldB (Max.) f=200MHz f=10kHz Unit in mm 09.S9MAX. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL v CBO VCEO VEBO ic PC Tj T stg RATING 50 35 3 300 UNIT V V V mA 600 mW 150 -65 ~150 °C °C 1. EMITTER 2. BASE & colljv-or 4. Ck:'i 7 . TC-5, TI TOSHIBA 2-8DIA Weight : 1.