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SILICON NPN EPITAXIAL PLANAR TYPE
UHF BAND POWER AMPLIFIER APPLICATIONS.
FEATURES
. Output Power : F o =0. 9W(Min.
(f=470MHz,
Vcc=12.6V,
5 I
i=0.3W)
. All Electrodes Insulated from Case.
MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation
(Tc=25°C) Junction Temperature Storage Temperature Range
SYMBOL VcBO v CEO VEBO ic
PC
T
J
T stg
RATING 40 20
4
0.5
UNIT V V V A
5
W
175
°c
-65-175 °c
Unit in mm
09. 3 9 MAX. 2^a45MAX.
;
X < s !> d to
j^G.4 5
M s o
05
I
05 08
3
X1
45° yy
°'X 1. EMITTER
2. BASE
3. GOLLECTO]R
JEDEC
TO-39
EIAJ
TC-5, TB- 5B
TOSHIBA
2-8B IC
Weight : 1.
2SC1165 Datasheet
