Toshiba 2SC3266
Silicon NPN TRANSISTOR
APPLICATIONS
Power SwitchingAPPLICATIONS
2SC3266 Unit: mm● Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 2 A)
● Complementary to 2SA1296
MAXIMUM RATINGS
(Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 20 20 6 2 0.5 750 150 -55~150 Unit V V V A A mW °C °CELECTRICAL CHARACTERISTICS
(Ta = 25°C) Characteristics Symbol Test Condition Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage Emitter-base breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance ICBO VCB = 20 V, IE = 0 IEBO VEB = 6 V, IC = 0 V (BR) CEO IC = 10 mA, IB = 0 V (BR) EBO IE = 0.1 mA, IC = 0 hFE (1) VCE = 2 V, IC = 0.1 A (Note) hFE (2) VCE (sat) VBE fT Cob VCE = 2 V, IC = 2 A IC = 2 A, IB = 0.1 A...