Toshiba 2SC3268
Silicon NPN Transistor
| Part No. | 2SC3268 |
|---|---|
| Datasheet | 2SC3268 Download |
| Manufacturer |  Toshiba |
| Description | Silicon NPN Transistor |
| Buy | Stock & Price |
APPLICATIONS
Unit: mm● NF = 1.7dB, |S21e|2 = 15.0dB (f = 500 MHz)
● NF = 2dB, |S21e|2 = 9.5dB (f = 1000 MHz)
MAXIMUM RATINGS
(Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Base current Collector current Collector power dissipation Collector power dissipation VCBO VCEO VEBO IB IC PC PC (Note 1) 17 12 3 30 70 300 800 V V V mA mA mW mW Junction temperature Storage temperature range Tj 125 °C Tstg -55~150 °C Note 1: When mounted ceramic substrate of 250 mm2 ´ 0.8 mmt Microwave Characteristics (Ta = 25°C) JEDEC ― JEITA ― TOSHIBA 2-5K1A Weight: 0.052 g (typ.) Characteristics Transition frequency Insertion gain Noise figure Symbol Test Condition fT ïS21eï2 (1) ïS21eï2 (2) NF (1) NF (2) VCE = 10 V, IC = 20 mA VCE = 10 V, IC = 20 mA, f = 500 MHz VCE = 10 V, IC = 20 mA, f = 1 GHz VCE = 10 V, IC = 5 mA, f = 500 MHz VCE = 10 V, IC = 5 mA, f = 1 GHz Min Typ. Max Unit ¾ 5 ¾ GHz ¾ 15.0 ¾ ¾ 9.5 ¾ dB ¾ 1.7 ¾ dB ¾ 2.0 ¾ELECTRICAL CHARACTERISTICS
(Ta = 25°C) Characteristics Symbol Test Condition Min Typ.
