Toshiba 2SC3267
Silicon NPN TRANSISTOR
| Part No. | 2SC3267 |
|---|---|
| Datasheet | 2SC3267 Download |
| Manufacturer |  Toshiba |
| Description | Silicon NPN TRANSISTOR |
| Buy | Stock & Price |
APPLICATIONS
Power SwitchingAPPLICATIONS
2SC3267 Unit: mm● Low saturation voltage: VCE (sat) = 0.5 V (max) @IC = 2 A
● Complementary to 2SA1297
MAXIMUM RATINGS
(Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 20 20 6 2 0.5 400 150 -55~150 Unit V V V A A mW °C °CELECTRICAL CHARACTERISTICS
(Ta = 25°C) Characteristics Symbol Test Condition Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage Emitter-base breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance ICBO VCB = 20 V, IE = 0 IEBO VEB = 6 V, IC = 0 V (BR) CEO IC = 10 mA, IB = 0 V (BR) EBO IE = 0.1 mA, IC = 0 hFE (1) (Note) VCE = 2 V, IC = 100 mA hFE (2) VCE (sat) VBE fT Cob VCE = 2 V, IC = 2 A IC = 2 A, IB = 0.1 A...
