2SC506 Description
SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS) HIGH VOLTAGE AMPLIFIER APPLICATIONS. HIGH VOLTAGE SWITCHING APPLICATIONS.
2SC506 Key Features
- High Breakdown Voltage : VCEQ=300V (2SC505)
- 65M.75
- Part: 2SC506
- Manufacturer: Toshiba
- Size: 116.50 KB
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