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2SC506 - SILICON NPN TRANSISTOR

Download the 2SC506 datasheet PDF. This datasheet also covers the 2SC505 variant, as both devices belong to the same silicon npn transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • High Breakdown Voltage : VCEQ=300V (2SC505) : VCEO=200V (2SC506) 2SC505' 2SC506, Unit in mm S& 9.39 MAX.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2SC505-Toshiba.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 2SC506
Manufacturer Toshiba
File Size 116.50 KB
Description SILICON NPN TRANSISTOR
Datasheet download datasheet 2SC506 Datasheet

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Other Datasheets by Toshiba

Part Number Description
2SC503 Silicon NPN Epitaxial Type Transistor
2SC504 Silicon NPN Epitaxial Type Transistor
2SC505 SILICON NPN TRANSISTOR
2SC507 SILICON NPN TRANSISTOR
2SC510 SILICON NPN TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS) HIGH VOLTAGE AMPLIFIER APPLICATIONS. HIGH VOLTAGE SWITCHING APPLICATIONS. FEATURES • High Breakdown Voltage : VCEQ=300V (2SC505) : VCEO=200V (2SC506) 2SC505' 2SC506, Unit in mm S& 9.39 MAX MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage 2SC505 2SC506 SYMBOL v CBO RATING 300 200 UNIT V Collector- Emitter Voltage 2SC505 2SC506 Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range V CEO v EBO ic IB pC T i Tstg 300 V 200 3V 1. EMITTER 2. BASE 200 mA 3. COLLECTOR (CASE) 50 mA JEDEC 600 mW TO-39 175 °C TC-5, TB-5B -65M.75 °C TOSHIBA ELECTRICAL CHARACTERISTICS (Ta=25°C) Weight : l.