2SC519A - SILICON NPN TRANSISTOR

Toshiba

Key Features

. High Voltage : VCBO=130V(2SC519A) ,VCEO=110V(2SC519A).
High Collector Power Dissipation : P C=50W (Tc=25°C).

2SC519A silicon npn transistor by Toshiba - Datasheet Preview

Datasheet Details

Part number	2SC519A
Manufacturer	Toshiba
File Size	139.47 KB
Description	SILICON NPN TRANSISTOR
Datasheet	2SC519A Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
2SC519A	Silicon NPN Triple Diffused Mesa Transistor	ETC
2SC5190	NPN TRANSISTOR	Panasonic Semiconductor
2SC5191	NPN TRANSISTOR	NEC
2SC5191	Silicon NPN Transistor	Inchange Semiconductor
2SC5192	NPN TRANSISTOR	NEC

Other Datasheets by Toshiba

Part Number	Description
2SC510	SILICON NPN TRANSISTOR
2SC512	SILICON NPN TRANSISTOR
2SC5129	Silicon NPN Transistor
2SC503	Silicon NPN Epitaxial Type Transistor
2SC504	Silicon NPN Epitaxial Type Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

2SC519AI 2SC520A 2SC521AJ SILICON NPN TRIPLE DIFFUSED TYPE POWER AMPLIFIER, POWER SWITCHING APPLICATIONS. DC-DC CONVERTER, REGULATOR APPLICATIONS. INDUSTRIAL APPLICATIONS unit in mm FEATURES . High Voltage : VCBO=130V(2SC519A) ,VCEO=110V(2SC519A) • High Collector Power Dissipation : P C=50W (Tc=25°C) MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base 2SC519A Voltage 2SC520A 2SC521A CollectorEmitter Voltage 2SC519A 2SC520A 2SC521A SYMBOL 'CBO 'CEO RATING 130 100 70 110 80 50 UNIT 025.OMAX. 21.0MAZ. tX3 - 0.0 9 *1.0-0.03 Emitter-Base Voltage Collector Current Base Current VEBO Collector Power Dissipation Tc=25°C (Note) 50 25 Junction Temperature 150 Storage Temperature Range Tstg -65^150 Note Unit Mounted On a 300x300x2mmA£.