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2SC521A - SILICON NPN TRANSISTOR

Download the 2SC521A datasheet PDF. This datasheet also covers the 2SC519A variant, as both devices belong to the same silicon npn transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • . High Voltage : VCBO=130V(2SC519A) ,VCEO=110V(2SC519A).
  • High Collector Power Dissipation : P C=50W (Tc=25°C).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (2SC519A-Toshiba.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number 2SC521A
Manufacturer Toshiba
File Size 139.47 KB
Description SILICON NPN TRANSISTOR
Datasheet download datasheet 2SC521A Datasheet

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Other Datasheets by Toshiba

Part Number Description
2SC5200N NPN Transistor
2SC5208 Silicon NPN Transistor
2SC520A SILICON NPN TRANSISTOR
2SC522 SILICON NPN TRANSISTOR
2SC524 SILICON NPN TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
2SC519AI 2SC520A 2SC521AJ SILICON NPN TRIPLE DIFFUSED TYPE POWER AMPLIFIER, POWER SWITCHING APPLICATIONS. DC-DC CONVERTER, REGULATOR APPLICATIONS. INDUSTRIAL APPLICATIONS unit in mm FEATURES . High Voltage : VCBO=130V(2SC519A) ,VCEO=110V(2SC519A) • High Collector Power Dissipation : P C=50W (Tc=25°C) MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base 2SC519A Voltage 2SC520A 2SC521A CollectorEmitter Voltage 2SC519A 2SC520A 2SC521A SYMBOL 'CBO 'CEO RATING 130 100 70 110 80 50 UNIT 025.OMAX. 21.0MAZ. tX3 - 0.0 9 *1.0-0.03 Emitter-Base Voltage Collector Current Base Current VEBO Collector Power Dissipation Tc=25°C (Note) 50 25 Junction Temperature 150 Storage Temperature Range Tstg -65^150 Note Unit Mounted On a 300x300x2mmA£.