2SC594 - SILICON NPN TRANSISTOR

Toshiba

Key Features

High Transition Frequency : fx=200MHz (Typ-).
Low Output Capacitance : C b=3.5pF (Typ. ).
Low Saturation Voltage : V CE ( sat )=0.3V (Max. ) at I c=100mA, I B =10mA.
Complementary to 2SA594.

2SC594 silicon npn transistor by Toshiba - Datasheet Preview

Datasheet Details

Part number	2SC594
Manufacturer	Toshiba
File Size	92.89 KB
Description	SILICON NPN TRANSISTOR
Datasheet	2SC594 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SILICON NPN EPITAXIAL TYPE (PCT PROCESS) HIGH FREQUENCY AMPLIFIER APPLICATIONS. VIDEO AMPLIFIER APPLICATIONS. HIGH SPEED SWITCHING APPLICATIONS. FEATURES • High Transition Frequency : fx=200MHz (Typ-) • Low Output Capacitance : C b=3.5pF (Typ. ) • Low Saturation Voltage : V CE ( sat )=0.3V (Max.) at I c=100mA, I B =10mA • Complementary to 2SA594. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage SYMBOL VcBO VcEO VEBO Collector Current Base Current Collector Power Dissipation Junction Temperature Ta=25°C Tc=25°C Storage Temperature Range ic IB PC TJ Tstg RATING 60 UNIT V 45 V 5V 200 mA 50 mA 750 mW 5W 175 °C -65VL75 °C Unit in mm jZfe,39MAX. 08.45MAX Xr tto to 00.45 i1 JZfo.58_, ? 2^ / Z jj A^fc H 1.