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SILICON NPN EPITAXIAL PLANAR TYPE
VHF BAND POWER AMPLIFIER APPLICATIONS.
FEATURES : • Output Power : Po=0.95W (Min.)
( f=175MHz, V CC =13.5V, P-f=40mW )
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation
(Ta=25°C) Junction Temperature Storage Temperature Range
SYMBOL v CBO v CEO vebo ic
pC
T
J
T stg
RATING 36 15
3
0.1
0.6
175
-65-175
Unit in mm
09.39MAX.
,
08.45MAX
,
00.45
^ d
i
M s
HOS
<
1
05. 08
UNIT ;^v
V 3
-CV
s?> I
V 45 W^T
V
A 1. EMITTER 2. BASE
W 3 COLLECTOR ("CASE)
JEDEC °C EIAJ
TO— 39 TC— 5 , TB— 5B
°C TOSHIBA
2-8B1A
'
Weight : l.
2SC994 Datasheet
