Datasheet Summary
:
SILICON N CHANNEL JUNCTION TYPE (INDUSTRIAL APPLICATIONS)
FOR LOW NOISE AMPLIFIER, DC~AC HIGH INPUT
IMPEDANCE CIRCUIT, CHOPPER AND
SWITCHING CIRCUIT APPLICATIONS.
Features
. Ultra Low Noise, as well Low Source Impedance
: NF=10dB(Max.) (f=10Hz, Rg=lkQ) : NF= 2dB(Max.) (f=lkHz, Rg=lkQ)
. High Forward Transfer Admittance : lYfs I = 7~34mS
. Low Gate-Source Cutoff Voltage : VGS(OFF)=-0.75V(Max.) (2SK112-R) : VGS(OFF)=-1.20V(Max.) (2SK112-0)
. High Breakdown Voltage: V(BR)GDS=-50V
Unit in mm 058MAX.
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC Gate-Drain Voltage Gate Current Drain Power Dissipation Junction Temperature Storage Temperature Range
SYMBOL VGDS IG PD
Tstg
RATING -50 10...
