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2SK112 - Silicon N-Channel Transistor

Key Features

  • . Ultra Low Noise, as well Low Source Impedance : NF=10dB(Max. ) (f=10Hz, Rg=lkQ) : NF= 2dB(Max. ) (f=lkHz, Rg=lkQ) . High Forward Transfer Admittance : lYfs I = 7~34mS . Low Gate-Source Cutoff Voltage : VGS(OFF)=-0.75V(Max. ) (2SK112-R) : VGS(OFF)=-1.20V(Max. ) (2SK112-0) . High Breakdown Voltage: V(BR)GDS=-50V Unit in mm 058MAX.

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Datasheet Details

Part number 2SK112
Manufacturer Toshiba
File Size 183.97 KB
Description Silicon N-Channel Transistor
Datasheet download datasheet 2SK112 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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: 2SK112 SILICON N CHANNEL JUNCTION TYPE (INDUSTRIAL APPLICATIONS) FOR LOW NOISE AMPLIFIER, DC~AC HIGH INPUT IMPEDANCE CIRCUIT, CHOPPER AND SWITCHING CIRCUIT APPLICATIONS. FEATURES . Ultra Low Noise, as well Low Source Impedance : NF=10dB(Max.) (f=10Hz, Rg=lkQ) : NF= 2dB(Max.) (f=lkHz, Rg=lkQ) . High Forward Transfer Admittance : lYfs I = 7~34mS . Low Gate-Source Cutoff Voltage : VGS(OFF)=-0.75V(Max.) (2SK112-R) : VGS(OFF)=-1.20V(Max.) (2SK112-0) . High Breakdown Voltage: V(BR)GDS=-50V Unit in mm 058MAX. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Gate-Drain Voltage Gate Current Drain Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VGDS IG PD Tstg RATING -50 10 250 150 -65-150 ELECTRICAL CHARACTERISTICS (Ta=25 C) UNIT 1. SOURCE mA 2. DRAIN mW 3.