Toshiba 2SK112
Silicon N-Channel Transistor
| Part No. | 2SK112 |
|---|---|
| Datasheet | 2SK112 Download |
| Manufacturer |  Toshiba |
| Description | Silicon N-Channel Transistor |
| Buy | Stock & Price |
APPLICATIONS
) FOR LOW NOISE AMPLIFIER, DC~AC HIGH INPUT IMPEDANCE CIRCUIT, CHOPPER AND SWITCHING CIRCUITAPPLICATIONS
.FEATURES
. Ultra Low Noise, as well Low Source Impedance : NF=10dB(Max.) (f=10Hz, Rg=lkQ) : NF= 2dB(Max.) (f=lkHz, Rg=lkQ) . High Forward Transfer Admittance : lYfs I = 7~34mS . Low Gate-Source Cutoff Voltage : VGS(OFF)=-0.75V(Max.) (2SK112-R) : VGS(OFF)=-1.20V(Max.) (2SK112-0) . High Breakdown Voltage: V(BR)GDS=-50V Unit in mm 058MAX.MAXIMUM RATINGS
(Ta=25°C) CHARACTERISTIC Gate-Drain Voltage Gate Current Drain Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VGDS IG PD Tstg RATING -50 10 250 150 -65-150ELECTRICAL CHARACTERISTICS
(Ta=25 C) UNIT 1. SOURCE mA 2. DRAIN mW 3. GATE ("CASE) JEDEC TO-18 TC— 7, TB-8C TOSHIBA 2-5A1C Weight : 0.31g CHARACTERISTIC SYMBOL TEST CONCITION Gate Leakage Current IGSS VGS=-30V, VDS=0 Gate-Drain Breakdown Voltage V(BR)GDS vds=o, ig=-im MIN. - -50 TYP. MAX. UNIT - -0.1 nA - - V Drain Current IDSS (Note) VDS=15V,...
