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SILICON N CHANNEL JUNCTION TYPE (INDUSTRIAL APPLICATIONS)
FOR ANALOG SWITCH,, CHOPPER AMPLIFIER AND SWITCHING CIRCUIT APPLICATIONS,
FEATURES . High Breakdown Voltage : V(br)gdS =-50v . Low ON Resistance : rDS(ON) = 30 Q(Max. ) (2SK113-Y) . Low Leakage : I D (oFF)=100pA(Max. ) (VdS=20V)
2SK113
Unit in mm
05.8MAX.
MAXIMUM RATINGS (Ta=25 C)
CHARACTERISTIC
SYMBOL RATING
UNIT
Gate-Drain Voltage Gate Current Drain Power Dissipation Junction Temperature Storage Temperature Range
VGDS IG PD
Tstg
-50 10
250 150
-65-150
V
1. SOURCE
mA
2. DRAIN
3. GATE ("CASE)
mW JEDEC
TO-li
EIAJ
TC— 7 , TB-8C
TOSHIBA
Weight : 0.
2SK113 Datasheet
