2SK11 Datasheet | Toshiba

SILICON N CHANNEL JUNCTION TYPE (INDUSTRIAL APPLICATIONS) 2SK11 2SK12 2SK15 LOW FREQUENCY AMPLIFIER, HIGH INPUT IMPEDANCE CIRCUIT, CHOPPER AMPLIFIER, DIFFERENTIAL AMPLIFIER AND SWITCHING CIRCUIT APPLICATIONS. LOW NOISE AMPLIFIER APPLICATIONS (2SK15). Features - Low Gate Leakage Current : I GSS =-1.0nA (Max.) (2SK11) : I GSS =-0.1nA (Max.) (2SK12, 2SK15) - High Gain : l>'fsl=700 ^ 3200 US (2SK11) : |yfsl =800 % 3200 yS (2SK12, 2SK15) - Low Noise NF=3dB (Max.) at f=lkHz, R g=lMfi (2SK12) NF=3dB (Max.) at f =lkHz , Rg=10kfi (2SK15) NF=10dB (Max.) at f=120Hz, Rg=10kft (2SK15) Well Matched Pairs are Available. (Refer to page 3) Unit in mm 1. SOURCE 2. GATE 3. DRAIN 4. SHIELD TO-17 TC-4 , TB-6C Weight : 0.30g MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Gate-Drain Voltage Gate Current Drain Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VGDS IG PD T j T stg RATING -20 10 100 150 -65 ^ 150 UNIT V mA mW °C °C -649 2SK11 2SK12 2SK15 ELECTRICAL CHARACTERISTICS (Ta=25°C) CHARACTERISTIC SYMBOL Gate Leakage Current 2SK12 2SK15...