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2SK11 - Silicon N-Channel Transistor

Key Features

  • Low Gate Leakage Current : I GSS =-1.0nA (Max. ) (2SK11) : I GSS =-0.1nA (Max. ) (2SK12, 2SK15).
  • High Gain : l>'fsl=700 ^ 3200 US (2SK11) : |yfsl =800 % 3200 yS (2SK12, 2SK15).
  • Low Noise NF=3dB (Max. ) at f=lkHz, R g=lMfi (2SK12) NF=3dB (Max. ) at f =lkHz , Rg=10kfi (2SK15) NF=10dB (Max. ) at f=120Hz, Rg=10kft (2SK15) Well Matched Pairs are Available. (Refer to page 3) Unit in mm 1. SOURCE 2. GATE 3. DRAIN 4. SHIELD TO-17 TC-4 , TB-6C Weight : 0.30g.

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Datasheet Details

Part number 2SK11
Manufacturer Toshiba
File Size 394.89 KB
Description Silicon N-Channel Transistor
Datasheet download datasheet 2SK11 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SILICON N CHANNEL JUNCTION TYPE (INDUSTRIAL APPLICATIONS) 2SK11 2SK12 2SK15 LOW FREQUENCY AMPLIFIER, HIGH INPUT IMPEDANCE CIRCUIT, CHOPPER AMPLIFIER, DIFFERENTIAL AMPLIFIER AND SWITCHING CIRCUIT APPLICATIONS. LOW NOISE AMPLIFIER APPLICATIONS (2SK15). FEATURES • Low Gate Leakage Current : I GSS =-1.0nA (Max.) (2SK11) : I GSS =-0.1nA (Max.) (2SK12, 2SK15) • High Gain : l>'fsl=700 ^ 3200 US (2SK11) : |yfsl =800 % 3200 yS (2SK12, 2SK15) • Low Noise NF=3dB (Max.) at f=lkHz, R g=lMfi (2SK12) NF=3dB (Max.) at f =lkHz , Rg=10kfi (2SK15) NF=10dB (Max.) at f=120Hz, Rg=10kft (2SK15) Well Matched Pairs are Available. (Refer to page 3) Unit in mm 1. SOURCE 2. GATE 3. DRAIN 4. SHIELD TO-17 TC-4 , TB-6C Weight : 0.