Toshiba 2SK118
N-Channel MOSFET
| Part No. | 2SK118 |
|---|---|
| Datasheet | 2SK118 Download |
| Manufacturer |  Toshiba |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
APPLICATIONS
2SK118 Unit: mm● High breakdown voltage: VGDS = −50 V
● High input impedance: IGSS = −1 nA (max) (VGS = −30 V)
● Low noise: NF = 0.5dB (typ.) (RG = 100 kΩ, f = 120 Hz)
● Small package
ABSOLUTE MAXIMUM RATINGS
(Ta = 25°C) Characteristics Symbol Rating Unit Gate-drain voltage Gate current Drain power dissipation Junction temperature Storage temperature range VGDS IG PD Tj Tstg −50 10 100 125 −55~125 V mA mW °C °C Note: Using continuously under heavy loads (e.g. the application of JEDEC ― high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the JEITA ― reliability significantly even if the operating conditions (i.e. TOSHIBA 2-4E1B operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Weight: 0.13 g (typ.) Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
