2SK386 - N-Channel Transistor

Toshiba

Key Features

. High Breakdown Voltage : V/g^)Dgs=450V . High Forward Transfer Admittance : Yf s1 1 =5S (Typ . . Low Leakage Current : lGSS =±1 00nA(Max. ) @ VGS =±20V lDSS=lmA(Max. ) @ Vds=450V . Enhancement-Mode : V t h=1.5~3.5V @ lD=lmA.

2SK386 n-channel transistor by Toshiba - Datasheet Preview

Datasheet Details

Part number	2SK386
Manufacturer	Toshiba
File Size	41.43 KB
Description	N-Channel Transistor
Datasheet	2SK386 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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: 2SK386 ) SILICON N CHANNEL MOS TYPE (7T-MOS) HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS. SWITCHING REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm y20i5MAX. 03.3+U2 ,- ;I' FEATURES . High Breakdown Voltage : V/g^)Dgs=450V . High Forward Transfer Admittance : Yf s1 1 =5S (Typ . . Low Leakage Current : lGSS =±1 00nA(Max. ) @ VGS =±20V lDSS=lmA(Max.) @ Vds=450V . Enhancement-Mode : V t h=1.5~3.5V @ lD=lmA MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage Drain Current DC Pulse Drain Power Dissipation (Tc=25°C) SYMBOL VdSX VGSS ID Idp Pd RATING 450 ±20 10 15 120 UNIT 545±Q15 wo 545±ai5 x" +1 to —^C5 CO 2 57 | 1. GATE 2.