2SK386
2SK386 is N-Channel Transistor manufactured by Toshiba.
FEATURES
. High Breakdown Voltage : V/g^)Dgs=450V
.
High Forward
Transfer Admittance
:
Yf s1 1
=5S
(Typ .
. Low Leakage Current : l GSS =±1 00n A(Max. ) @ VGS =±20V l DSS=lm A(Max.) @ Vds=450V
. Enhancement-Mode
: V t h=1.5~3.5V @ l D=lm A
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC
Drain-Source Voltage
Gate-Source Voltage
Drain Current
DC Pulse
Drain Power Dissipation (Tc=25°C)
SYMBOL Vd SX VGSS ID Idp
Pd
RATING 450 ±20 10 15
UNIT
545±Q15 wo
545±ai5 x"
+1 to
- ^C5
2 57
|
1. GATE 2. DRAIN (HEAT SINK) a SOURCE
Channel Temperature Storage Temperature Range
Teh stg
-55-150
°C EIA J
TOSHIBA
2-21F1B
Weight :...
