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2SK420 - Silicon N-Channel MOSFET

Key Features

  • . High Breakdown Voltage : V(br)dss= 400V . High Forward Transfer Admittance : lYf s l=2.5S (Typ. ) . Low Leakage Current : LGSS=i100nA(Max. ) @ Vgs=±20V . Enhancement -Mode IDS S= 1mA (Max. ) @ VdS=400V : Vth= l- 5~ 3. 5V @ lD=lmA.

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Datasheet Details

Part number 2SK420
Manufacturer Toshiba
File Size 44.17 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet 2SK420 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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: i SILICON N CHANNEL MPS TYPE (7T-MOS) HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS. SWITCHING REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. FEATURES . High Breakdown Voltage : V(br)dss= 400V . High Forward Transfer Admittance : lYf s l=2.5S (Typ.) . Low Leakage Current : LGSS=i100nA(Max. ) @ Vgs=±20V . Enhancement -Mode IDS S= 1mA (Max.) @ VdS=400V : Vth= l- 5~ 3. 5V @ lD=lmA MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage Drain Current DC Pulse Drain Power Dissipation (Tc=25°C) SYMBOL VDSX vgss ID Idp pd RATING 400 ±20 UNIT 60 INDUSTRIAL APPLICATIONS Unit in mm 10.3MAX. —7.0 r szs3.2±o.2 ' < I H A r,) to ri X -H o+1 zs iri ~n jl 1-8 . »' 1.4 j 2 1 +0.25 (176 -ais 2.54±0.25 . i 3.54 ±0.