2SK421 - Silicon N-Channel MOSFET

Toshiba

Key Features

. High Breakdown Voltage : V(g R ) Dg S =450V . High Forward Transfer Admittance : ]Yf s |=2.5S (Typ. ) . Low Leakage Current : lGSS=±100nA(Max. ) @ Vgs =±20V . Enhancement-Mode lDSS=lmA(Max. ) @ Vds=450V : V t h=l-5~3.5V @ lD=lmA.

2SK421 silicon n-channel mosfet by Toshiba - Datasheet Preview

Datasheet Details

Part number	2SK421
Manufacturer	Toshiba
File Size	42.96 KB
Description	Silicon N-Channel MOSFET
Datasheet	2SK421 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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: SILICON N CHANNEL MPS TYPE (7T-MOS) HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS. SWITCHING REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. FEATURES . High Breakdown Voltage : V(g R ) Dg S =450V . High Forward Transfer Admittance : ]Yf s |=2.5S (Typ.) . Low Leakage Current : lGSS=±100nA(Max. ) @ Vgs =±20V . Enhancement-Mode lDSS=lmA(Max.) @ Vds=450V : V t h=l-5~3.5V @ lD=lmA INDUSTRIAL APPLICATIONS Unit in mm 10.3MAX. ,,7-Q 0&2±o.2 ry ^ w jj MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Drain-Source Voltage Gate-Source Voltage V DSX 450 VGSS ±20 Drain Current DC Pulse Drain Power Dissipation ITc=25°CJ Channel Temperature Storage Temperature Range ID I DP Teh Tstg ELECTRICAL CHARACTERISTICS (Ta=25°C) 60 150 -55-150 1. GATE 2.