• Part: 2SK421
  • Description: Silicon N-Channel MOSFET
  • Category: MOSFET
  • Manufacturer: Toshiba
  • Size: 42.96 KB
Download 2SK421 Datasheet PDF
Toshiba
2SK421
FEATURES . High Breakdown Voltage : V(g R ) Dg S =450V . High Forward Transfer Admittance : ]Yf s |=2.5S (Typ.) . Low Leakage Current : l GSS=±100n A(Max. ) @ Vgs =±20V . Enhancement-Mode l DSS=lm A(Max.) @ Vds=450V : V t h=l-5~3.5V @ l D=lm A INDUSTRIAL APPLICATIONS Unit in mm 10.3MAX. ,,7-Q 0&2±o.2 ry ^ w jj MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Drain-Source Voltage Gate-Source Voltage V DSX VGSS ±20 Drain Current DC Pulse Drain Power Dissipation ITc=25°CJ Channel Temperature Storage Temperature Range ID I DP Teh Tstg ELECTRICAL CHARACTERISTICS (Ta=25°C) 60 150 -55-150 1. GATE 2. DRAIN (HEAT SINK) & SOURCE TOSHIBA Weight : 2.0g 2-10K1B CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Gate Leakage Current IGSS Drain Cut-off Current IDSS Drain-Source Breakdown Voltage V(BR)DSS Gate Threshold...