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74HC00D - Quad 2-Input NAND Gate

General Description

2.

The 74HC00D is a high speed CMOS 2-INPUT NAND GATE fabricated with silicon gate C2MOS technology.

It achieves the high speed operation similar to equivalent LSTTL while maintaining the CMOS low power dissipation.

Key Features

  • (1) High speed: tpd = 6 ns (typ. ) at VCC = 5 V (2) Low power dissipation: ICC = 1.0 µA (max) Ta = 25  (3) Balanced propagation delays: tPLH ≈ tPHL (4) Wide operating voltage range: VCC(opr) = 2.0 to 6.0 V 4. Packaging SOIC14 ©2016 Toshiba Corporation 1 Start of commercial production 2016-03 2016-08-04 Rev.3.0 5. Pin Assignment 6. Marking 7. IEC Logic Symbol 74HC00D ©2016 Toshiba Corporation 2 2016-08-04 Rev.3.0 8. Truth Table 74HC00D A B Y L L H L H H H L H H H L 9. A.

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Datasheet Details

Part number 74HC00D
Manufacturer Toshiba
File Size 166.83 KB
Description Quad 2-Input NAND Gate
Datasheet download datasheet 74HC00D Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CMOS Digital Integrated Circuits Silicon Monolithic 74HC00D 74HC00D 1. Functional Description • Quad 2-Input NAND Gate 2. General The 74HC00D is a high speed CMOS 2-INPUT NAND GATE fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent LSTTL while maintaining the CMOS low power dissipation. The internal circuit is composed of 3 stages including buffer output, which provide high noise immunity and stable output. All inputs are equipped with protection circuits against static discharge or transient excess voltage. 3. Features (1) High speed: tpd = 6 ns (typ.) at VCC = 5 V (2) Low power dissipation: ICC = 1.0 µA (max) Ta = 25  (3) Balanced propagation delays: tPLH ≈ tPHL (4) Wide operating voltage range: VCC(opr) = 2.0 to 6.0 V 4.