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74HC03D - Quad 2-Input NAND Gate

General Description

2.

The 74HC03D is a high speed CMOS 2-INPUT NAND GATE fabricated with silicon gate C2MOS technology.

It achieves the high speed operation similar to equivalent LSTTL while maintaining the CMOS low power dissipation.

Key Features

  • (1) High speed: tpz = 5 ns (typ. ) at VCC = 5 V (2) Low power dissipation: ICC = 1.0 µA (max) at Ta = 25  (3) Wide operating voltage range: VCC(opr) = 2.0 to 6.0 V (4) Open drain structure 4. Packaging SOIC14 ©2016 Toshiba Corporation 1 Start of commercial production 2016-05 2016-08-04 Rev.3.0 5. Pin Assignment 6. Marking 7. IEC Logic Symbol 74HC03D ©2016 Toshiba Corporation 2 2016-08-04 Rev.3.0 8. Truth Table A B Y L L Z L H Z H L Z H H L Z: High impedance 9. System D.

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Datasheet Details

Part number 74HC03D
Manufacturer Toshiba
File Size 171.57 KB
Description Quad 2-Input NAND Gate
Datasheet download datasheet 74HC03D Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CMOS Digital Integrated Circuits Silicon Monolithic 74HC03D 74HC03D 1. Functional Description • Quad 2-Input NAND Gate (Open Drain) 2. General The 74HC03D is a high speed CMOS 2-INPUT NAND GATE fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent LSTTL while maintaining the CMOS low power dissipation. Pin configuration and function are the same as the 74HC00D. But the 74HC03D has, as its outputs, high performance MOS N-channel transistors. (open-drain outputs) This device can, thefore, with a suitable pull-up resistors, be used in wired-AND, LED driver and other application. All inputs are equipped with protection circuits against static discharge or transient excess voltage. 3. Features (1) High speed: tpz = 5 ns (typ.