C2562 Description
I SILICON NPN EPITAXIAL TYPE (PCT PROCESS) HIGH CURRENT SWITCHING APPLICATIONS.
C2562 Key Features
- Low Collector Saturation Voltage : VcE(sat)=0-^v < Max -) < at IC=3A)
- High Speed Switching Time : t stg=1.0ys (Typ.)
- plementary to 2SA1012