C2562
C2562 is 2SC2562 manufactured by Toshiba.
:
SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
HIGH CURRENT SWITCHING APPLICATIONS. Features
- Low Collector Saturation Voltage : Vc E(sat)=0-^v < Max -) < at IC=3A)
- High Speed Switching Time : t stg=1.0ys (Typ.)
- plementary to 2SA1012.
INDUSTRIAL APPLICATIONS Unit in mm
10.3MAX. ^3.6±0.2
MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage Emitter-Base Voltage
Collector Current Collector Power Dissipation
(Tc=25- C) Junction Temperature
Storage Temperature Range
SYMBOL v CBO v CEO v EBO ic pc T i
T stg
ELECTRICAL CHARACTERISTICS (Ta=25°C)
RATING 60 50
5 5 25
150 -55v L50
UNIT V V V A W °C °c
<
23 € CO
1. BASE 2. COLLECTOR(HEAT SINK) 3. EMITTER
TO 220 AB
Mounting Kit No. AC75 Weight : 1.9g
CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current Collector- Emitter Breakdown Voltage
DC Current Gain
Saturation Collector- Emitter
Voltage...
