CUS08F30 Datasheet | Toshiba

Features (1) Low forward voltage: VF(3) = 0.40 V (typ.) (2) General-purpose USC package, equivalent to SOD-323 and SC-76 packages. 3. Packaging and Internal Circuit 1: Cathode 2: Anode 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25) Characteristics Symbol Note Rating Unit Reverse voltage  Average rectified current IO (Note 1) 800 m A Non-repetitive peak forward surge current IFSM (Note 2) Junction temperature Tj   Storage temperature Tstg  -55 to 125 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on a ceramic circuit board of 25 mm × 25 mm, Pad dimension of 2 mm × 2 mm. Note 2: Measured with a 10 ms pulse. Start of mercial production 2010-12 2014-04-14 Rev.5.0 5. Electrical Characteristics (Unless otherwise specified, Ta = 25) Characteristics Symbol Note Test...