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CUS08F30 - Schottky Barrier Diode

Key Features

  • (1) Low forward voltage: VF(3) = 0.40 V (typ. ) (2) General-purpose USC package, equivalent to SOD-323 and SC-76 packages. 3. Packaging and Internal Circuit CUS08F30 1: Cathode 2: Anode USC 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25) Characteristics Symbol Note Rating Unit Reverse voltage VR  30 V Average rectified current IO (Note 1) 800 mA Non-repetitive peak forward surge current IFSM (Note 2) 5 A Junction temperature Tj  125  Storage.

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Datasheet Details

Part number CUS08F30
Manufacturer Toshiba
File Size 122.80 KB
Description Schottky Barrier Diode
Datasheet download datasheet CUS08F30 Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Schottky Barrier Diode Silicon Epitaxial CUS08F30 1. Applications • High-Speed Switching 2. Features (1) Low forward voltage: VF(3) = 0.40 V (typ.) (2) General-purpose USC package, equivalent to SOD-323 and SC-76 packages. 3. Packaging and Internal Circuit CUS08F30 1: Cathode 2: Anode USC 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25) Characteristics Symbol Note Rating Unit Reverse voltage VR  30 V Average rectified current IO (Note 1) 800 mA Non-repetitive peak forward surge current IFSM (Note 2) 5 A Junction temperature Tj  125  Storage temperature Tstg  -55 to 125 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.