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CUS520 - Schottky Barrier Diode

Key Features

  • (1) AEC-Q101 qualified (Note 1) (2) Low reverse current: IR(2) = 5 µA (max) (3) General-purpose USC package, equivalent to SOD-323 and SC-76 packages. Note 1: For detail information, please contact our sales. 3. Packaging and Internal Circuit CUS520 USC 1: Cathode 2: Anode ©2023 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2010-12 2023-07-08 Rev.6.0 CUS520 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25.
  • ) Characteristics.

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Datasheet Details

Part number CUS520
Manufacturer Toshiba
File Size 143.66 KB
Description Schottky Barrier Diode
Datasheet download datasheet CUS520 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Schottky Barrier Diode Silicon Epitaxial CUS520 1. Applications • High-Speed Switching 2. Features (1) AEC-Q101 qualified (Note 1) (2) Low reverse current: IR(2) = 5 µA (max) (3) General-purpose USC package, equivalent to SOD-323 and SC-76 packages. Note 1: For detail information, please contact our sales. 3. Packaging and Internal Circuit CUS520 USC 1: Cathode 2: Anode ©2023 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2010-12 2023-07-08 Rev.6.0 CUS520 4.