DF2S5.6FS Datasheet | Toshiba

ESD Protection Diodes Silicon Epitaxial Planar 1. Applications - ESD Protection Note: This product is designed for protection against electrostatic discharge (ESD) and is not intended for any other purpose, including, but not limited to, voltage regulation. 2. Packaging and Internal Circuit SOD-923 1: Cathode 2: Anode 1: Cathode 2: Anode f SC ©2021 Toshiba Electronic Devices & Storage Corporation Start of mercial production 2003-04 2021-12-16 Rev.4.0 3. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25- ) Characteristics Symbol Rating Unit Electrostatic discharge voltage (IEC61000-4-2)(Contact) VESD ±30 k V Junction temperature Tj - Storage temperature Tstg -55 to 150 - Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 4. Electrical Characteristics (Unless otherwise specified, Ta = 25- ) VRWM: Working peak reverse voltage VZ: Zener voltage VBR: Reverse breakdown voltage ZZ: Dynamic impedance IZ: Zener current IBR: Reverse breakdown current IR: Reverse current VC: Clamp voltage IPP: Peak pulse current RDYN: Dynamic resistance IF: Forward current VF: Forward voltage Fig. 4.1 Definitions of Electrical Characteristics Characteristics Working peak reverse voltage Zener voltage (Reverse breakdown voltage) Dynamic impedance Reverse current Total capacitance Symbol VRWM VZ (VBR) ZZ IR...