DF2S5.6S Datasheet | Toshiba

.. TOSHIBA Diodes for Protecting against ESD Product for Use Only as Protection against Electrostatic Discharge (ESD). - This product is for protection against electrostatic discharge (ESD) only and is not intended for any other usage, including without limitation, the constant voltage diode application. Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Power dissipation Junction temperature Storage temperature range Symbol P Tj Tstg Rating 150- 150 - 55~150 Unit m W °C °C CATHODE MARK z 2terminal ultra small package suitable for mounting on small space. - : Mounted on a glass-epoxy circuit board of 20 × 20 mm, pad dimensions of 4 × 4 mm. JEDEC JEITA TOSHIBA ― ― 1-1K1A Electrical Characteristics (Ta = 25°C) Characteristic Zener voltage Dynamic impedance Reverse current Total capacitance Symbol VZ ZZ IR CT Test Condition IZ = 5 m A IZ = 5 m A VR = 3.5 V VR = 0 V, f = 1 MHz Weight: 0.0011 g (typ.) Min 5.3 ― ― ― Typ. 5.6 ― ― 40 Max 6.0 30 1 ― Unit V Ω μA p F Guaranteed Level of ESD Immunity Test Condition IEC61000-4-2 (contact discharge) ESD Immunity Level Marking 6. Equivalent Circuit (Top View) ±30 k V Criterion: No damage to device elements 2007-08-20 .. - VR - VZ 100 f = 1MHz Ta = 25°C Ta = 25°C ZENER CURRENT IZ (m A) 10 TOTAL CAPACITANCE CT(p F) 0 0.1 1 0 1 2 3 4 5 6 0.01 0 0 1 2 3 4 5 6 7 8 9 10 REVERSE VOLTAGE VR(V) ZENER VOLTAGE VZ (V) 2007-08-20...