GT20J121
GT20J121 is manufactured by Toshiba.
Discrete IGBTs Silicon N-Channel IGBT
1. Applications
- Dedicated to Current-Resonant Inverter Switching Applications
- Dedicated to Partial-Switching Power Factor Correction (PFC) Applications
Note: The product(s) described herein should not be used for any other application.
2. Features
(1) Sixth generation (2) Enhancement mode (3) High-speed switching: tf = 0.27 µs (typ.) (IC = 20 A) (4) Low saturation voltage: VCE(sat) = 1.25 V (typ.) (IC = 20 A) (5) TO-220SIS (Toshiba package name)
3. Packaging and Internal Circuit
TO-220SIS
1: Gate 2: Collector 3: Emitter
©2021
Toshiba Electronic Devices & Storage Corporation
Start of mercial production
2012-09
2021-08-24...
