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GT20J121 - Silicon N-Channel IGBT

Key Features

  • (1) Sixth generation (2) Enhancement mode (3) High-speed switching: tf = 0.27 µs (typ. ) (IC = 20 A) (4) Low saturation voltage: VCE(sat) = 1.25 V (typ. ) (IC = 20 A) (5) TO-220SIS (Toshiba package name) 3. Packaging and Internal Circuit GT20J121 TO-220SIS 1: Gate 2: Collector 3: Emitter ©2021 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2012-09 2021-08-24 Rev.3.0 GT20J121 4. Absolute Maximum Ratings (Note) (Ta = 25.
  • , unless otherwise specified) C.

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Datasheet Details

Part number GT20J121
Manufacturer Toshiba
File Size 253.14 KB
Description Silicon N-Channel IGBT
Datasheet download datasheet GT20J121 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Discrete IGBTs Silicon N-Channel IGBT GT20J121 1. Applications • Dedicated to Current-Resonant Inverter Switching Applications • Dedicated to Partial-Switching Power Factor Correction (PFC) Applications Note: The product(s) described herein should not be used for any other application. 2. Features (1) Sixth generation (2) Enhancement mode (3) High-speed switching: tf = 0.27 µs (typ.) (IC = 20 A) (4) Low saturation voltage: VCE(sat) = 1.25 V (typ.) (IC = 20 A) (5) TO-220SIS (Toshiba package name) 3. Packaging and Internal Circuit GT20J121 TO-220SIS 1: Gate 2: Collector 3: Emitter ©2021 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2012-09 2021-08-24 Rev.3.0 GT20J121 4.